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DIM800ECM33-F000
IGBT Chopper Module
DS5815-1.2 January 2009(LN26568)
FEATURES
Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability 10s Short Circuit Withstand Lead Free construction
KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max)
*(measured at the auxiliary terminals)
3300V 2.8V 800A 1600A
APPLICATIONS
Choppers Motor Controllers Power Supplies
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 3600A. The DIM800ECM33-F000 is a 3300V, soft punch through n-channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10us short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As: DIM800ECM33-F000 Note: When ordering, please use the complete part number
Outline type code: E (See Fig. 11 for further information) Fig. 2 Package
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DIM800ECM33-F000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25 C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax It Visol QPD
2
Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I t value Isolation voltage Partial discharge
2
Test Conditions VGE = 0V
Max. 3300 20
Units V V A A kW kA s kV pC
2
Tcase = 90 C 1ms, Tcase= 115 C Tcase = 25 C, Tj = 150 C VR = 0V, tp = 10ms, Tj = 125 C Commoned terminals to base plate. AC RMS,1 min, 50Hz
IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RMS
800 1600 10.4 320 6 10
THERMAL AND MECHANICAL RATINGS
Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) Rth(j-c) Rth(c-h) Tj Parameter Thermal resistance - transistor both arms Thermal resistance - diode, C3-E3 & transistor arms Thermal resistance - case to heatsink (per module) Junction temperature AlN AlSiC 29mm 20mm 350 Test Conditions Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Tstg Storage temperature range Screw torque Mounting M6 Electrical connections - M4 Electrical connections - M8 -40 Min Typ. Max Units 12 24 6 150 125 125 5 2 10 C/kW C/kW C/kW C C C Nm Nm Nm
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DIM800ECM33-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25 C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V,VCE = VCES VGE = 0V, V = V ,Tcase =125 C IGES VGE(TH) VCE(sat)
Min Typ. Max 4 60 1 5.5 6.5 2.8 3.6 800 1600 2.9 3.0 144 2.2 15 135 7.0
Units mA mA A V V V A A V V nF nF nH A A
Gate leakage current Gate threshold voltage Collector-emitter saturation voltage Diode forward current
VGE = 15V, VCE = 0V IC = 80mA, VGE = VCE VGE = 15V, IC = 800A VGE =15V, IC = 800A,TJ = 125 C DC
IF IFM VF
Diode maximum forward current tp = 1ms Diode forward voltage IF = 800A IF = 800A, TJ = 125 C
Cies Cres LM RINT
Input capacitance Reverse transfer capacitance Module inductance Internal resistance
VCE = 25V, VGE = 0V, f = 1MHz VCE = 25V, VGE = 0V, f = 1MHz
SCData
Short circuit current, ISC
Tj = 125 C, VCC = 2500V VGE tp * VCE(max) CES - L x di/dt IEC 6074-9
I1 I2
4000 3700
Note:
*
Measured at the auxiliary terminals
L is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800ECM33-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25 C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr Erec Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse recovery current Diode reverse recovery energy IF =800A VCE =1800V dIF/dt =4000A/us Test Conditions IC = 800A VGE = 15V VCE = 1800V RG(ON) = 3.9 , RG(OFF)= 6.2 Cge = 220nF, L ~ 100nH
IC = 800A, VGE = 15V, VCE = 1800V, RG(ON) = 2.7 , Cge = 220nF, L ~100nH
Min
Typ. 3.0 270 1050 1.3 275 1250 20 320 670 300
Max
Units s ns mJ s ns mJ C C A mJ
Tcase = 125 C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr Erec Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse recovery current Diode reverse recovery energy Test Conditions IC = 800A VGE = 15V VCE = 1800V RG(ON) = 3.9 , RG(OFF) = 6.2 Cge = 220nF, L ~ 100nH
IC = 800A, VGE = 15V, VCE = 1800V, RG(ON) = 2.7 , Cge = 220nF, L ~ 100nH
Min
Typ. 3.1 280 1200 1.2 315 1750 600 800 600
Max
Units s ns mJ s ns mJ C A mJ
IF =800A VCE =1800V dIF/dt =4000A/us
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This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800ECM33-F000
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig.5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800ECM33-F000
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
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This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800ECM33-F000
PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Nominal weight: 1700g Module outline type code: E Fig.11 Package details
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800ECM33-F000
POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS & OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Fax: +44(0)1522 500550 Tel: +44(0)1522 500500
CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Fax: +44(0)1522 500020 Tel: +44(0)1522 502753 / 502901
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN THE UK
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:Target Information: Preliminary Information: Advance Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual d work on the product has been started The product is in design and development. The datasheet represents the product as it is understood but may change. The product design is complete and final characterisation for volume production is well in hand. The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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